IRF8734PBF International Rectifier, IRF8734PBF Datasheet - Page 4

• Manufacturer Part Number: IRF8734PBF
• Description: MOSFET N-CH 30V 21A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF8734PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 2.35V @ 50µA
• Gate Charge (qg) @ Vgs: 30nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3175pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.1 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 20 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF8734PbF
4
100000
10000
1000
1000
100
100
0.1
10
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
0.3
1
Drain-to-Source Voltage
0.4
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
T J = 150°C
0.5
C oss
C rss
C iss
0.6
f = 1 MHZ
10
T J = 25°C
0.7
V GS = 0V
0.8
0.9
1.0
100
1000
14.0
12.0
10.0
100
0.1
8.0
6.0
4.0
2.0
0.0
10
1
Fig 8. Maximum Safe Operating Area
0
0
Fig 6. Typical Gate Charge Vs.
T A = 25°C
Tj = 150°C
Single Pulse
I D = 17A
5 10 15 20 25 30 35 40 45 50 55
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
V DS = 24V
V DS = 15V
10msec
100µsec
1msec
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10
100