IRF8734PBF International Rectifier, IRF8734PBF Datasheet - Page 7

• Manufacturer Part Number: IRF8734PBF
• Description: MOSFET N-CH 30V 21A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF8734PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 2.35V @ 50µA
• Gate Charge (qg) @ Vgs: 30nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3175pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.1 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 20 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 16a. Gate Charge Test Circuit
*
**
‚
+
-
D.U.T
Fig 17. Diode Reverse Recovery Test Circuit for HEXFET
20K
1K
*
ƒ
+
-
•
•
•
•
SD
•
•
•
S
DUT
-
„
G
L
+
**
+
-
VCC
Re-Applied
Voltage
Reverse
Recovery
Current
***
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Id
Fig 16b. Gate Charge Waveform
Vgs
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
®
Qgodr
Diode Recovery
Current
IRF8734PbF
Power MOSFETs
dv/dt
Forward Drop
di/dt
Qgd
D =
Period
P.W.
Qgs2
Vgs(th)
Vds
Qgs1
V
V
I
SD
***
GS
DD
=10V
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