IRF7420PBF International Rectifier, IRF7420PBF Datasheet
IRF7420PBF
Specifications of IRF7420PBF
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IRF7420PBF Summary of contents
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... V Gate-to-Source Voltage Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient θJA www.irf.com V DSS -12V Top View @ -4. -4.5V GS IRF7420PbF HEXFET Power MOSFET R max I DS(on) D 14mΩ@V = -4.5V 11. 17.5mΩ@V = -2.5V 9. 26mΩ@V = -1.8V 8. SO-8 Max. Units ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
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PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150 C ° ...
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0V MHZ 5000 C iss = SHORTED 4500 C rss = oss = 4000 Ciss 3500 3000 ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 ...
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-11.5A 0.010 0.005 0.0 2.0 4.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge ...
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Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 400 350 300 250 -250µA 200 150 ...
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SO-8 Package Outline Dimensions are shown in milimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PI PSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9à ...
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SO-8 Tape and Reel Dimensions are shown in milimeters (inches) 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : ...