Specifications of IRF7420PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 11.5A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
11.5A
Vgs(th) (max) @ Id
900mV @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 4.5V
Input Capacitance (ciss) @ Vds
3529pF @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
P
Current, Drain
-11.5 A
Gate Charge, Total
38 nC
Package Type
SO-8
Polarization
P-Channel
Power Dissipation
2.5 W
Resistance, Drain To Source On
14 Milliohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
291 ns
Time, Turn-on Delay
8.8 ns
Transconductance, Forward
32 S
Voltage, Breakdown, Drain To Source
-12 V
Voltage, Drain To Source
–12 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±8 V
Transistor Polarity
P Channel
Continuous Drain Current Id
11.5A
Drain Source Voltage Vds
12V
On Resistance Rds(on)
14mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-900mV
Rohs Compliant
Yes
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
14 mOhms
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
- 11.5 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
225 ns
Gate Charge Qg
38 nC
Minimum Operating Temperature
- 55 C
Rise Time
8.8 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
...
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