IRF7420PBF International Rectifier, IRF7420PBF Datasheet

MOSFET P-CH 12V 11.5A 8-SOIC

IRF7420PBF

Manufacturer Part Number
IRF7420PBF
Description
MOSFET P-CH 12V 11.5A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRF7420PBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 11.5A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
11.5A
Vgs(th) (max) @ Id
900mV @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 4.5V
Input Capacitance (ciss) @ Vds
3529pF @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
P
Current, Drain
-11.5 A
Gate Charge, Total
38 nC
Package Type
SO-8
Polarization
P-Channel
Power Dissipation
2.5 W
Resistance, Drain To Source On
14 Milliohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
291 ns
Time, Turn-on Delay
8.8 ns
Transconductance, Forward
32 S
Voltage, Breakdown, Drain To Source
-12 V
Voltage, Drain To Source
–12 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±8 V
Transistor Polarity
P Channel
Continuous Drain Current Id
11.5A
Drain Source Voltage Vds
12V
On Resistance Rds(on)
14mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-900mV
Rohs Compliant
Yes
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
14 mOhms
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
- 11.5 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
225 ns
Gate Charge Qg
38 nC
Minimum Operating Temperature
- 55 C
Rise Time
8.8 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7420PBF
Manufacturer:
IR
Quantity:
20 000

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IRF7420PBF Summary of contents

Page 1

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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

SO-8 Package Outline Dimensions are shown in milimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PI PSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã ...

Page 4

SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...

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