IRF7701TRPBF International Rectifier, IRF7701TRPBF Datasheet
IRF7701TRPBF
Specifications of IRF7701TRPBF
Related parts for IRF7701TRPBF
IRF7701TRPBF Summary of contents
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... Lead-Free l Description ® HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that Inter- national Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for use in battery and load management ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
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VGS TOP -7.00V -4.5V -3.0V -2.5V -1.8V -1.5V 10 -1.2V BOTTOM -1.0V 1 -1.0V 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T ...
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0V MHZ C iss = rss = oss = 6000 Ciss 4000 Coss 2000 Crss 0 ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) ...
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-10A 0.02 0.01 0.00 1.5 2.5 -V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Charge Fig 13a. Basic Gate Charge ...
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Temperature ( °C ) Fig 14. Threshold Voltage Vs. Temperature www.irf.com -250µ 0.01 75 100 125 150 0.10 ...
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E INDEX MARK ccc e bbb aaa C 8 SURF LEAD AS S IGNMENTS ...
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EXAMPLE: THIS IS AN IRF7702 DAT E CODE (YWW) TSSOP-8 Tape and Reel Information FEED DIRECTION WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com PART NUMBER 7702 LOT CODE XXXXX P ...