STU2NK100Z STMicroelectronics, STU2NK100Z Datasheet - Page 14
![MOSFET N-CH 1000V 1.85A IPAK](/photos/5/60/56062/dpak_369d___01_sml.jpg)
STU2NK100Z
Manufacturer Part Number
STU2NK100Z
Description
MOSFET N-CH 1000V 1.85A IPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STP2NK100Z.pdf
(16 pages)
Specifications of STU2NK100Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.5 Ohm @ 900mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
1.85A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Input Capacitance (ciss) @ Vds
499pF @ 25V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
8.5 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1.85 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STU2NK100Z
Manufacturer:
TI
Quantity:
3 306
Packaging mechanical data
5
14/16
Packaging mechanical data
DIM.
A0
B0
B1
D1
K0
P0
P1
P2
W
D
E
R
F
TAPE MECHANICAL DATA
All dimensions are in millimeters
MIN.
10.4
1.65
2.55
15.7
6.8
1.5
1.5
7.4
3.9
7.9
1.9
40
DPAK FOOTPRINT
mm
MAX.
10.6
12.1
1.85
2.75
16.3
1.6
7.6
4.1
8.1
2.1
7
0.267 0.275
0.409 0.417
0.059 0.063
0.059
0.065 0.073
0.291 0.299
0.100 0.108
0.153 0.161
0.075 0.082
1.574
0.311 0.319
0.618
MIN.
inch
TAPE AND REEL SHIPMENT
MAX.
0.476
0.641
STD2NK100Z - STP2NK100Z - STU2NK100Z
DIM.
C
D
G
N
A
B
T
BASE QTY
REEL MECHANICAL DATA
2500
MIN.
12.8
20.2
16.4
1.5
50
mm
MAX.
13.2
18.4
22.4
330
BULK QTY
0.059
0.504 0.520
0.795
0.645 0.724
1.968
MIN.
2500
inch
12.992
MAX.
0.881