STU2NK100Z STMicroelectronics, STU2NK100Z Datasheet - Page 9

• Manufacturer Part Number: STU2NK100Z
• Description: MOSFET N-CH 1000V 1.85A IPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STU2NK100Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 Ohm @ 900mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 1.85A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 499pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.5 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.85 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STD2NK100Z - STP2NK100Z - STU2NK100Z
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Figure 16. Switching times test circuit for
Figure 18. Test circuit for inductive load
Figure 20. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuits
Figure 17. Gate charge test circuit
Figure 19. Unclamped inductive load test
Figure 21. Switching time waveform
circuit
Test circuits
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