STU2NK100Z STMicroelectronics, STU2NK100Z Datasheet - Page 5
![MOSFET N-CH 1000V 1.85A IPAK](/photos/5/60/56062/dpak_369d___01_sml.jpg)
STU2NK100Z
Manufacturer Part Number
STU2NK100Z
Description
MOSFET N-CH 1000V 1.85A IPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STP2NK100Z.pdf
(16 pages)
Specifications of STU2NK100Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.5 Ohm @ 900mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
1.85A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Input Capacitance (ciss) @ Vds
499pF @ 25V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
8.5 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1.85 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STU2NK100Z
Manufacturer:
TI
Quantity:
3 306
STD2NK100Z - STP2NK100Z - STU2NK100Z
Table 7.
Table 8.
1. Pulse width limited by package
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 9.
1. The built in back-to-back zener diodes have specifically been designed to enhance not only the device’s
Symbol
Symbol
Symbol
I
BV
V
SDM
I
I
t
t
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated zener diodes thus avoid the
usage of external components.
SD
d(on)
d(off)
RRM
RRM
I
Q
Q
(1)
SD
t
t
t
t
GSO
rr
rr
r
r
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Switching times
Source drain diode
Gate-source zener diode
Parameter
Parameter
Parameter
I
I
V
(see Figure 21)
I
V
(see Figure 21)
I
V
R
(see Figure 16)
SD
SD
SD
GS
DD
DD
DD
G
= 1.85 A, V
= 1.85 A, di/dt= 100 A/µs,
= 1.85 A, di/dt= 100 A/µs,
=4.7 Ω, V
= ±1mA (open drain)
= 60 V
= 60 V, Tj=150 °C
= 500 V, I
Test conditions
Test conditions
Test conditions
GS
D
GS
= 0.9 A,
=10 V
=0
Electrical characteristics
Min.
Min.
Min.
30
Typ.
Typ.
Typ.
41.5
32.5
476
532
1.6
6.9
1.9
7.2
6.5
88
Max.
Max.
Max.
1.85
7.4
1.6
Unit
Unit
Unit
ns
ns
ns
ns
µC
µC
ns
ns
A
A
V
A
A
V
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