STU2NK100Z STMicroelectronics, STU2NK100Z Datasheet - Page 6

• Manufacturer Part Number: STU2NK100Z
• Description: MOSFET N-CH 1000V 1.85A IPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STU2NK100Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 Ohm @ 900mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 1.85A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 499pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.5 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.85 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
2.1
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Figure 2.
Figure 4.
Figure 6.
Safe operating area for TO-220
Safe operating area for DPAK, IPAK Figure 5.
Output characteristics
Electrical characteristics (curves)
Figure 3.
Figure 7.
STD2NK100Z - STP2NK100Z - STU2NK100Z
Thermal impedance for TO-220
Thermal impedance for DPAK, IPAK
Transfer characteristics