IRFS4410PBF International Rectifier, IRFS4410PBF Datasheet - Page 2

• Manufacturer Part Number: IRFS4410PBF
• Description: MOSFET N-CH 100V 88A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFS4410PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 58A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 88A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 5150pF @ 50V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 96 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 50 ns
• Gate Charge Qg: 120 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 80 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:

‚
ƒ
„
…
V
∆V
R
V
I
I
R
gfs
Q
Q
Q
t
t
t
t
C
C
C
C
C
I
I
V
t
Q
I
t
Static @ T
Dynamic @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
(BR)DSS
GS(th)
SD
DS(on)
G
iss
oss
rss
oss
oss
g
gs
gd
rr
temperature. Package limitation current is 75A.
Calculated continuous current based on maximum allowable junction
Repetitive rating; pulse width limited by max. junction
Limited by T
Pulse width ≤ 400µs; duty cycle ≤ 2%.
temperature.
I
2
R
above this value.
SD
Symbol
Symbol
Symbol
(BR)DSS
G
eff. (ER) Effective Output Capacitance (Energy Related)
eff. (TR) Effective Output Capacitance (Time Related)
≤ 58A, di/dt ≤ 650A/µs, V
= 25Ω, I
/∆T
J
AS
Jmax
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Input Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
= 58A, V
= 25°C (unless otherwise specified)
, starting T
J
= 25°C (unless otherwise specified)
Parameter
GS
=10V. Part not recommended for use
J
= 25°C, L = 0.14mH
DD
Ãd
≤ V
Parameter
Parameter
(BR)DSS
, T
J
≤ 175°C.
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
†
‡
ˆ
‰
Š
100
––– 0.094 –––
–––
–––
–––
–––
–––
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended
R
R
C
as C
C
footprint and soldering techniques refer to application note #AN-994.
measured value after 1000 temperature cycles from -55 to 150°C and is
accounted for by the physical wearout of the die attach medium.
oss
θ
θJC
oss
oss
is measured at T
5150
eff. (TR) is a fixed capacitance that gives the same charging time
oss
–––
–––
–––
190
eff. (ER) is a fixed capacitance that gives the same energy as
while V
(end of life) for D
–––
–––
–––
–––
120
360
420
500
–––
–––
–––
110
8.0
2.8
1.5
44
24
80
55
38
51
61
31
50
while V
DS
-200
88
–––
250
200
–––
–––
180
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
380
170
–––
4.0
1.3
10
20
56
77
92
DS
is rising from 0 to 80% V
™
is rising from 0 to 80% V
J
V/°C
mΩ
µA
nA
nC
nC
approximately 90°C.
pF
ns
ns
2
Ω
V
V
S
A
A
V
A
Pak and TO-262 = 0.75°C/W. Note: This is the maximum
V
Reference to 25°C, I
V
V
V
V
V
V
f = 1MHz, open drain
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
J
J
J
J
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
G
= 58A
= 58A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 4.1Ω
= 0V, I
= 10V, I
= V
= 100V, V
= 100V, V
= 20V
= -20V
= 50V, I
= 80V
= 10V
= 65V
= 10V
= 0V
= 50V
= 0V, V
= 0V, V
GS
, I
D
g
g
DSS
D
S
DS
DS
D
D
= 250µA
= 58A, V
= 150µA
DSS
= 58A
= 58A
.
GS
GS
= 0V to 80V
= 0V to 80V
Conditions
Conditions
Conditions
.
= 0V
= 0V, T
V
I
di/dt = 100A/µs
F
R
= 58A
D
g
= 85V,
GS
= 1mA
J
= 0V
= 125°C
i
G
www.irf.com
d
, See Fig.11
, See Fig. 5
g
g
D
S