IRFS4410PBF International Rectifier, IRFS4410PBF Datasheet - Page 4

MOSFET N-CH 100V 88A D2PAK

IRFS4410PBF

Manufacturer Part Number
IRFS4410PBF
Description
MOSFET N-CH 100V 88A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFS4410PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10 mOhm @ 58A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
88A
Vgs(th) (max) @ Id
4V @ 150µA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
5150pF @ 50V
Power - Max
200W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
10 m Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
96 A
Power Dissipation
250 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
50 ns
Gate Charge Qg
120 nC
Minimum Operating Temperature
- 55 C
Rise Time
80 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFS4410PBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFS4410PBF
Quantity:
9 000
Company:
Part Number:
IRFS4410PBF
Quantity:
10 000
4
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
2.0
1.5
1.0
0.5
0.0
1000
100
0
100
75
50
25
10
0
1
Fig 11. Typical C
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
25
V DS, Drain-to-Source Voltage (V)
20
T J = 175°C
50
V SD , Source-to-Drain Voltage (V)
40
T C , Case Temperature (°C)
75
60
Limited By Package
OSS
100
T J = 25°C
80
Stored Energy
125
100
V GS = 0V
150
120
175
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
1000
100
130
125
120
115
110
105
100
900
800
700
600
500
400
300
200
100
10
1
0
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0
25
0
Tc = 25°C
Tj = 175°C
Single Pulse
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
10msec
1
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
DC
20 40 60 80 100 120 140 160 180
75
1msec
100
10
100µsec
TOP
BOTTOM 58A
125
100
150
I D
6.7A
9.7A
www.irf.com
1000
175

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