IRFS4410PBF International Rectifier, IRFS4410PBF Datasheet - Page 6

• Manufacturer Part Number: IRFS4410PBF
• Description: MOSFET N-CH 100V 88A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFS4410PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 58A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 88A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 5150pF @ 50V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 96 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 50 ns
• Gate Charge Qg: 120 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 80 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
20
15
10
5
0
Fig 16. Threshold Voltage vs. Temperature
100 200 300 400 500 600 700 800 900 1000
-75 -50 -25
I D = 150µA
I D = 250µA
I D = 1.0mA
I D = 1.0A
T J , Temperature ( °C )
0
25
di f /dt (A/µs)
50
75 100 125 150 175 200
I F = 38A
V
T
T J = 125°C ----------
R
J
= 25°C _____
= 85V
400
350
300
250
200
150
100
50
0
100 200 300 400 500 600 700 800 900 1000
f
di f /dt (A/µs)
I
V
T J = 25°C _____
T J = 125°C ----------
F
R
= 38A
= 85V
400
350
300
250
200
150
100
50
20
15
10
5
0
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
f
di f /dt (A/µs)
di f /dt (A/µs)
I F = 19A
V R = 85V
T
T
I F = 19A
V R = 85V
T
T
J
J
J
J
= 25°C _____
= 125°C ----------
= 25°C _____
= 125°C ----------
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