IRFS4410PBF International Rectifier, IRFS4410PBF Datasheet - Page 5

• Manufacturer Part Number: IRFS4410PBF
• Description: MOSFET N-CH 100V 88A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFS4410PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 58A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 88A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 5150pF @ 50V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 96 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 50 ns
• Gate Charge Qg: 120 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 80 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 15. Maximum Avalanche Energy vs. Temperature
250
200
150
100
50
0
25
0.0001
0.001
1000
Starting T J , Junction Temperature (°C)
0.01
100
0.1
0.1
10
1.0E-06
1
1
1E-006
50
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
D = 0.50
TOP
BOTTOM 1% Duty Cycle
I D = 58A
75
0.02
0.20
0.01
0.10
0.05
100
SINGLE PULSE
( THERMAL RESPONSE )
Single Pulse
1.0E-05
1E-005
125
Fig 14. Typical Avalanche Current vs.Pulsewidth
0.10
0.01
0.05
150
175
t 1 , Rectangular Pulse Duration (sec)
1.0E-04
0.0001
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long as neither T
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
6. I
7. ∆T
tav (sec)
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
during avalanche).
25°C in Figure 14, 15).
t
D = Duty cycle in avalanche = t
Z
is exceeded.
av
av =
thJC
D (ave)
= Allowable avalanche current.
=
τ
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed T
J
τ
J
τ
1
= Average power dissipation per single avalanche pulse.
Ci= τi/Ri
τ
av
1
Ci
) = Transient thermal resistance, see Figures 13)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
jmax
1.0E-03
i/Ri
0.001
R
1
R
. This is validated for every part type.
1
P
τ
D (ave)
2
R
τ
2
2
R
2
= 1/2 ( 1.3·BV·I
τ
I
E
C
av
τ
AS (AR)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
= 2DT/ [1.3·BV·Z
av
Ri (°C/W)
·f
1.0E-02
= P
0.2736
0.3376
0.01
D (ave)
av
) = DT/ Z
·t
th
av
0.000376
0.004143
]
τi (sec)
thJC
jmax
1.0E-01
(assumed as
0.1
jmax
nor I
av (max)
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