IRFP250NPBF International Rectifier, IRFP250NPBF Datasheet

MOSFET N-CH 200V 30A TO-247AC

IRFP250NPBF

Manufacturer Part Number
IRFP250NPBF
Description
MOSFET N-CH 200V 30A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRFP250NPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
75 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
123nC @ 10V
Input Capacitance (ciss) @ Vds
2159pF @ 25V
Power - Max
214W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Channel Type
N
Current, Drain
30 A
Gate Charge, Total
123 nC
Package Type
TO-247AC
Polarization
N-Channel
Power Dissipation
214 W
Resistance, Drain To Source On
0.075 Ohm
Resistance, Thermal, Junction To Case
0.7 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
41 ns
Time, Turn-on Delay
14 ns
Transconductance, Forward
17 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Drain To Source
200 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.075Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±20V
Continuous Drain Current
30A
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
20 V
Mounting Style
Through Hole
Gate Charge Qg
82 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFP250NPBF

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
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Manufacturer:
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Quantity:
12 000
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Quantity:
11 925
Part Number:
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Quantity:
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Company:
Part Number:
IRFP250NPBF
Quantity:
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www.irf.com
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Description
l
Absolute Maximum Ratings
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
θJC
θCS
θJA
@ T
@ T
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Lead-Free
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter


ƒ
GS
GS

@ 10V
@ 10V
G
IRFP250NPbF
Typ.
300 (1.6mm from case )
0.24
–––
–––
HEXFET
10 lbf•in (1.1N•m)
-55 to +175
D
S
Max.
120
214
± 20
315
1.4
8.6
30
21
30
21
®
R
Power MOSFET
DS(on)
V
Max.
TO-247AC
–––
0.7
40
DSS
I
D
= 30A
PD - 95007A
= 200V
= 0.075Ω
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
08/18/10
1

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IRFP250NPBF Summary of contents

Page 1

... T Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting torque, 6- srew Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com IRFP250NPbF G @ 10V GS @ 10V GS  ‚   ƒ 300 (1.6mm from case ) Typ. 0. 95007A ® HEXFET Power MOSFET ...

Page 2

... IRFP250NPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... TOP 100 BOTTOM 10 1 ° 0.1 0.1 100 3 3.0 2.5 2.0 1.5 1.0 0.5 = 50V 0.0 -60 -40 -20 0 9.0 10.0 IRFP250NPbF VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage (V) DS 30A V = 10V ...

Page 4

... IRFP250NPbF 5000 0V MHZ C iss = SHORTED C rss = C gd 4000 C oss = 3000 Ciss 2000 Coss 1000 Crss Drain-to-Source Voltage (V) 1000 100 T = 175 C ° 0.1 0.2 0.4 0.6 0.8 1.0 V ,Source-to-Drain Voltage ( 100 1000 1000 OPERATION IN THIS AREA LIMITED 100 ° 175 Single Pulse 1 1 ...

Page 5

... SINGLE PULSE 0.02 (THERMAL RESPONSE) 0.01 0.01 0.00001 0.0001 www.irf.com 90% 90% 150 175 150 175 ° 10% 10% ° Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRFP250NPbF + - ≤ 1 ≤ 1 ≤ 0.1 % ≤ 0 d(on) d(on d(off) d(off Notes ...

Page 6

... IRFP250NPbF D.U 20V 0.01 Ω Charge 6 800 15V 600 DRIVER + - V DD 400 A 200 V (BR)DSS 0 25 Starting T , Junction Temperature ( TOP 7.3A 13A BOTTOM 18A 50 75 100 125 150 ° J Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. 3mA Current Sampling Resistors www ...

Page 7

... P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% IRFP250NPbF + - V =10V ...

Page 8

... IRFP250NPbF 15.90 (.626) 15.30 (.602 20.30 (.800) 19.70 (.775 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 3.40 (.133) 2X 3.00 (.118) EXAMPLE: THIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates " ...

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