IRFP250NPBF International Rectifier, IRFP250NPBF Datasheet - Page 4

• Manufacturer Part Number: IRFP250NPBF
• Description: MOSFET N-CH 200V 30A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFP250NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 123nC @ 10V
• Input Capacitance (ciss) @ Vds: 2159pF @ 25V
• Power - Max: 214W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Channel Type: N
• Current, Drain: 30 A
• Gate Charge, Total: 123 nC
• Package Type: TO-247AC
• Polarization: N-Channel
• Power Dissipation: 214 W
• Resistance, Drain To Source On: 0.075 Ohm
• Resistance, Thermal, Junction To Case: 0.7 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 41 ns
• Time, Turn-on Delay: 14 ns
• Transconductance, Forward: 17 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.075Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 30A
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Mounting Style: Through Hole
• Gate Charge Qg: 82 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFP250NPBF

IRFP250NPbF
1000
4
100
5000
4000
3000
2000
1000
0.1
10
1
0.2
0
1
T = 175 C
0.4
J
V
Coss
SD
Ciss
Crss
V DS , Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
0.6
°
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
10
0.8
T = 25 C
J
1.0
f = 1 MHZ
100
°
1.2
V
GS
1.4
= 0 V
1000
1.6
1000
100
10
1
16
12
1
8
4
0
T
T
Single Pulse
C
J
0
I =
= 25 C
= 175 C
D
OPERATION IN THIS AREA LIMITED
V
18A
DS
°
°
20
Q , Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
G
10
BY R
40
DS(on)
60
V
V
V
100
DS
DS
DS
= 160V
= 100V
= 40V
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10us
100us
1ms
10ms
80
1000
100