IRFP250NPBF International Rectifier, IRFP250NPBF Datasheet - Page 7

MOSFET N-CH 200V 30A TO-247AC

IRFP250NPBF

Manufacturer Part Number
IRFP250NPBF
Description
MOSFET N-CH 200V 30A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRFP250NPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
75 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
123nC @ 10V
Input Capacitance (ciss) @ Vds
2159pF @ 25V
Power - Max
214W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Channel Type
N
Current, Drain
30 A
Gate Charge, Total
123 nC
Package Type
TO-247AC
Polarization
N-Channel
Power Dissipation
214 W
Resistance, Drain To Source On
0.075 Ohm
Resistance, Thermal, Junction To Case
0.7 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
41 ns
Time, Turn-on Delay
14 ns
Transconductance, Forward
17 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Drain To Source
200 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.075Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±20V
Continuous Drain Current
30A
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
20 V
Mounting Style
Through Hole
Gate Charge Qg
82 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFP250NPBF

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Re-Applied
Voltage
Reverse
Recovery
Current

+
-
D.U.T
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
D =
-
Period
P.W.
+
V
V
I
SD
IRFP250NPbF
GS
DD
=10V
+
-
7

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