IRFB4227PBF International Rectifier, IRFB4227PBF Datasheet - Page 2

• Manufacturer Part Number: IRFB4227PBF
• Description: MOSFET N-CH 200V 65A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFB4227PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24 mOhm @ 46A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 98nC @ 10V
• Input Capacitance (ciss) @ Vds: 4600pF @ 25V
• Power - Max: 330W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 65 A
• Gate Charge, Total: 70 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 330 W
• Resistance, Drain To Source On: 19.7 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -40 °C
• Time, Turn-off Delay: 21 ns
• Time, Turn-on Delay: 33 ns
• Transconductance, Forward: 49 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±30 V
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 65A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 19.7mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 30V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 65 A
• Mounting Style: Through Hole
• Gate Charge Qg: 70 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.024Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -40C to 175C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BV
∆ΒV
R
V
∆V
I
I
g
Q
Q
t
t
t
t
t
E
C
C
C
C
L
L
E
E
V
I
I
I
V
t
Q
IRFB4227PbF
Electrical Characteristics @ T
Avalanche Characteristics
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
st
AS
S
SM
rr
fs
D
S
DS(on)
GS(th)
PULSE
iss
oss
rss
oss
AS
AR
DS(Avalanche)
SD
g
gd
rr
@ T
2
GS(th)
DSS
DSS
eff.
C
/∆T
/∆T
= 25°C Continuous Source Current
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Shoot Through Blocking Time
Energy per Pulse
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
Internal Source Inductance
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Repetitive Avalanche Voltage
Avalanche Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Ù
Parameter
Parameter
Ã
J
= 25°C (unless otherwise specified)
Ù
™
Min. Typ. Max. Units
Min. Typ. Max. Units
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
49
4600
19.7
–––
170
–––
–––
–––
–––
–––
–––
–––
570
910
460
360
–––
–––
–––
100
430
-13
4.5
7.5
70
23
33
20
21
31
91
-100
–––
–––
Typ.
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
240
–––
260
150
640
5.0
1.0
1.3
24
20
98
65
mV/°C
mV/°C
mΩ
mA
µA
nA
nC
nH
nC
pF
ns
ns
µJ
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
R
V
V
L = 220nH, C= 0.4µF, V
V
L = 220nH, C= 0.4µF, V
V
V
V
ƒ = 1.0MHz,
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DD
DD
GS
DD
DS
DS
GS
DS
GS
G
= 46A
= 25°C, I
= 25°C, I
= 2.5Ω
= V
= 200V, V
= 200V, V
= 25V, I
= 160V, R
= 160V, R
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 100V, I
= 100V
= 10V
= 160V, V
= 0V
= 0V, V
GS
Max.
140
–––
33
39
, I
D
e
S
F
D
DS
D
Conditions
D
Conditions
= 250µA
= 46A, V
= 46A, V
= 250µA
D
= 46A
= 46A
GS
GS
GS
G
G
= 0V to 160V
= 46A, V
= 4.7Ω, T
= 4.7Ω, T
e
= 0V
= 0V, T
= 15V, R
D
e
GS
DD
= 1mA
www.irf.com
GS
J
GS
GS
= 0V
= 50V
J
J
= 125°C
G
= 10V
Units
= 25°C
= 100°C
= 4.7Ω
= 15V
= 15V
mJ
mJ
G
V
A
e
e
S
D