IRFB4227PBF International Rectifier, IRFB4227PBF Datasheet - Page 3

• Manufacturer Part Number: IRFB4227PBF
• Description: MOSFET N-CH 200V 65A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFB4227PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24 mOhm @ 46A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 98nC @ 10V
• Input Capacitance (ciss) @ Vds: 4600pF @ 25V
• Power - Max: 330W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 65 A
• Gate Charge, Total: 70 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 330 W
• Resistance, Drain To Source On: 19.7 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -40 °C
• Time, Turn-off Delay: 21 ns
• Time, Turn-on Delay: 33 ns
• Transconductance, Forward: 49 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±30 V
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 65A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 19.7mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 30V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 65 A
• Mounting Style: Through Hole
• Gate Charge Qg: 70 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.024Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -40C to 175C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.irf.com
Fig 5. Typical E
1000.0
1000
100.0
900
800
700
600
500
400
300
200
100
10.0
100
Fig 3. Typical Transfer Characteristics
1.0
0.1
10
Fig 1. Typical Output Characteristics
110
0.1
3.0
L = 220nH
C = 0.4µF
V DS = 25V
≤ 60µs PULSE WIDTH
TOP
BOTTOM
100°C
25°C
120
V DS, Drain-to -Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
4.0
T J = 175°C
VGS
15V
10V
8.0V
7.0V
PULSE
130
5.0
vs. Drain-to-Source Voltage
≤ 60µs PULSE WIDTH
Tj = 25°C
140
1
T J = 25°C
6.0
150
7.0
7.0V
160
10
8.0
170
Fig 4. Normalized On-Resistance vs. Temperature
1000
Fig 6. Typical E
800
600
400
200
4.0
3.0
2.0
1.0
0.0
1000
Fig 2. Typical Output Characteristics
0
100
10
130
-60 -40 -20 0
1
0.1
I D = 46A
V GS = 10V
L = 220nH
C = Variable
TOP
BOTTOM
100°C
25°C
140
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
I D, Peak Drain Current (A)
IRFB4227PbF
VGS
15V
10V
8.0V
7.0V
PULSE
150
20 40 60 80 100 120 140 160 180
vs. Drain Current
160
≤ 60µs PULSE WIDTH
Tj = 175°C
1
170
180
7.0V
3
190
10