IRFB4227PBF International Rectifier, IRFB4227PBF Datasheet - Page 5

• Manufacturer Part Number: IRFB4227PBF
• Description: MOSFET N-CH 200V 65A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFB4227PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24 mOhm @ 46A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 98nC @ 10V
• Input Capacitance (ciss) @ Vds: 4600pF @ 25V
• Power - Max: 330W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 65 A
• Gate Charge, Total: 70 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 330 W
• Resistance, Drain To Source On: 19.7 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -40 °C
• Time, Turn-off Delay: 21 ns
• Time, Turn-on Delay: 33 ns
• Transconductance, Forward: 49 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±30 V
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 65A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 19.7mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 30V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 65 A
• Mounting Style: Through Hole
• Gate Charge Qg: 70 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.024Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -40C to 175C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 15. Threshold Voltage vs. Temperature
Fig 13. On-Resistance Vs. Gate Voltage
0.16
0.12
0.08
0.04
0.00
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
-75 -50 -25
5
0.001
0.01
0.1
1
1E-006
V GS , Gate-to-Source Voltage (V)
6
D = 0.50
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
T J , Temperature ( °C )
0
0.20
0.10
0.02
0.01
0.05
7
25
SINGLE PULSE
( THERMAL RESPONSE )
50
8
75
T J = 25°C
T J = 125°C
1E-005
I D = 250µA
100 125 150 175
I D = 46A
9
10
t 1 , Rectangular Pulse Duration (sec)
0.0001
Fig 14. Maximum Avalanche Energy Vs. Temperature
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
i/Ri
R
0.001
1
R
1
600
500
400
300
200
100
200
160
120
Fig 16. Typical Repetitive peak Current vs.
80
40
τ
0
0
2
τ
R
2
25
25
2
R
2
R
Starting T J , Junction Temperature (°C)
τ
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
3
3
R
τ
50
50
3
3
τ
C
Case temperature
τ
Case Temperature (°C)
Ri (°C/W)
IRFB4227PbF
0.01
0.08698 0.000074
0.2112
0.1506
75
75
100
100
0.001316
0.009395
ton= 1µs
Duty cycle = 0.25
τi (sec)
TOP
BOTTOM
Half Sine Wave
Square Pulse
125
125
0.1
14A
8.6A
39A
150
150
I D
5
175
175