STP16NK60Z STMicroelectronics, STP16NK60Z Datasheet - Page 3

• Manufacturer Part Number: STP16NK60Z
• Description: MOSFET N-CH 600V 14A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP16NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 420 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Input Capacitance (ciss) @ Vds: 2650pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.42 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 14 A
• Power Dissipation: 190000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 14A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 420mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4372-5

STF16NK60Z, STP16NK60Z, STW16NK60Z
1
Electrical ratings
Table 2.
1. Limited by package
2. Pulse width limited by safe operating area
3. I
Table 3.
Table 4.
V
Symbol
Symbol
R
Symbol
dv/dt
R
ESD(G-S)
I
DM
P
V
thj-case
thj-amb
V
V
T
E
SD
I
I
I
TOT
T
T
AR
ISO
GS
DS
stg
AS
D
D
j
l
(2)
(3)
≤ 14 A, di/dt ≤ 200 A/µs, V
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD(HBM-C = 100 pF,
R = 1.5 kΩ)
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; T
Storage temperature
Max. operating junction temperature
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Absolute maximum ratings
Thermal data
Avalanche characteristics
C
j
= 25 °C)
= 25 °C, I
Parameter
Parameter
Parameter
C
D
Doc ID 10249 Rev 5
DD
= 25 °C
= I
GS
j
= 80% V
max)
AR
= 0)
, V
C
C
DD
(BR)DSS
= 25 °C
= 100 °C
= 50 V)
TO-220
TO-220 / TO-247
62.5
0.66
190
8.8
14
56
TO-247
Max value
-55 to 150
50
Value
6000
± 30
1.51
300
360
600
150
4.5
14
TO-220FP
Electrical ratings
TO-220FP
8.8
62.5
14
2500
56
3.1
40
(1)
(1)
(1)
°C/W
°C/W
W/°C
Unit
Unit
Unit
V/ns
mJ
°C
°C
°C
W
A
V
V
A
A
A
V
V
3/15