STP16NK60Z STMicroelectronics, STP16NK60Z Datasheet - Page 8

• Manufacturer Part Number: STP16NK60Z
• Description: MOSFET N-CH 600V 14A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP16NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 420 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Input Capacitance (ciss) @ Vds: 2650pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.42 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 14 A
• Power Dissipation: 190000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 14A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 420mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4372-5

Electrical characteristics
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Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
vs temperature
characteristics
Doc ID 10249 Rev 5
Figure 15. Normalized on resistance vs
Figure 17. Maximum avalanche energy vs
STF16NK60Z, STP16NK60Z, STW16NK60Z
temperature
temperature