STP16NK60Z STMicroelectronics, STP16NK60Z Datasheet - Page 5

• Manufacturer Part Number: STP16NK60Z
• Description: MOSFET N-CH 600V 14A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP16NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 420 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Input Capacitance (ciss) @ Vds: 2650pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.42 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 14 A
• Power Dissipation: 190000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 14A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 420mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4372-5

STF16NK60Z, STP16NK60Z, STW16NK60Z
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 9.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Symbol
I
BV
V
SDM
I
I
SD
RRM
RRM
I
Q
Q
SD
t
t
GSO
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Doc ID 10249 Rev 5
I
I
V
I
V
(see
Igs=± 1 mA (open drain)
SD
SD
SD
DD
DD
= 14 A, V
= 14 A, di/dt = 100 A/µs
= 14 A, di/dt = 100 A/µs
= 100 V (see
= 100 V, T
Figure
Test conditions
Test conditions
23)
GS
j
= 150 °C
= 0
Figure
23)
Electrical characteristics
Min.
Min
30
-
-
-
-
Typ.
490
585
5.4
Typ
22
24
7
-
Max. Unit
Max Unit
1.6
14
56
-
nC
nC
ns
ns
A
A
V
A
A
5/15
V