STP200NF04L STMicroelectronics, STP200NF04L Datasheet - Page 2

• Manufacturer Part Number: STP200NF04L
• Description: MOSFET N-CH 40V 120A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP200NF04L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 90nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6400pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 m Ohms
• Forward Transconductance Gfs (max / Min): 60 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 120 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 80 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 270 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4819-5

STP200NF04L - STB200NF04L - STB200NF04L-1
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Table 3: Absolute Maximum ratings
(1)I
(2) Pulse width limited by safe operating area.
(3) Starting T
(**) Current limited by Package
Table 4: Thermal Data
(*)When mounted on 1 inch² FR4 2oZ Cu
ELECTRICAL CHARACTERISTICS (T
Table 5: On/Off
Rthj-pcb (*)
Rthj-case
V
SD
Symbol
Symbol
dv/dt (1)
R
E
V
I
(BR)DSS
I
V
DM
P
Rthja
D
I
I
DS(on)
V
V
AS
GS(th)
T
DSS
GSS
GDR
TOT
I
T
T
DS
GS
stg
(**)
D
100 A, di/dt
j
l
(2)
(3)
j
= 25°C, I
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage V
Static Drain-source On
Resistance
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
Thermal Resistance Junction-case
Thermal Resistance Junction-pcb
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
240 A/µs, V
AR
Parameter
= 50A, V
DS
DD
= 0)
DD
GS
= 30V
32 , T
= 0)
C
GS
Parameter
j
= 25°C
GS
=20 K
T
I
V
V
V
V
V
V
V
D
JMAX
DS
D
GS
DS
GS
GS
GS
GS
= 0)
= 250 µA, V
= Max Rating, T
CASE
= Max Rating
= V
= ± 16V
= 10 V, I
= 5 V, I
= 10 V, I
= 5 V, I
C
C
Test Conditions
= 25°C
= 100°C
GS
=25°C UNLESS OTHERWISE SPECIFIED)
, I
D
D
D
D
D
GS
= 250µA
= 50 A
= 50 A
= 50 A
= 50 A
= 0
C
Max
Max
Max
= 125 °C
TO-220
I²PAK
D²PAK
TO-220/I²PAK
62.5
300
Min.
40
1
-55 to 175
Value
± 16
120
120
480
300
1.4
0.50
3.6
40
40
2
Typ.
3.3
3.8
3.0
3.5
D²PAK
35
--
--
±100
Max.
3.8
4.6
3.5
4.3
10
1
4
W/°C
°C/W
°C/W
V/ns
Unit
Unit
Unit
m
m
m
m
µA
µA
nA
°C
°C
W
V
V
V
A
A
A
V
V
J