STP200NF04L STMicroelectronics, STP200NF04L Datasheet - Page 3

• Manufacturer Part Number: STP200NF04L
• Description: MOSFET N-CH 40V 120A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP200NF04L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 90nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6400pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 m Ohms
• Forward Transconductance Gfs (max / Min): 60 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 120 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 80 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 270 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4819-5

ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Table 7: Source Drain Diode
(1) Pulse width limited by safe operating area
(4). Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Symbol
Symbol
I
V
SDM
g
t
t
t
I
C
SD
C
f(Voff)
C
Q
d(on)
d(off)
Q
fs
RRM
I
Q
Q
SD
t
t
oss
t
t
t
iss
rss
rr
c
gs
gd
r
f
f
(4)
g
rr
(4)
(1)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-off Delay Time
Fall Time
Cross-over Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
V
V
V
R
(see Figure 16)
V
R
(see Figure 17)
V
(see Figure 19)
I
I
V
(see Figure 16)
V
SD
SD
DS
DS
DD
clamp
GS
DD
G
G
DD
= 4.7
= 4.7
= 160 A, V
= 100 A, di/dt = 100 A/µs,
STP200NF04L - STB200NF04L - STB200NF04L-1
= 15 V
= 25V, f = 1 MHz, V
= 20 V, I
= 4.5 V
= 20 V, T
32 V, I
= 32 V, I
Test Conditions
Test Conditions
V
V
,
I
GS
GS
D
D
D
j
GS
= 20 A
= 150°C
= 50 A,
= 100 A,
D
= 4.5 V
= 4.5 V
= 100 A,
= 0
GS
= 0
Min.
Min.
6400
1300
Typ.
28.5
Typ.
190
270
125
160
240
5.5
60
37
90
80
85
72
20
88
Max.
Max.
100
400
1.3
90
Unit
Unit
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
3/12
S
A
A
V
A