STP200NF04L STMicroelectronics, STP200NF04L Datasheet - Page 4

• Manufacturer Part Number: STP200NF04L
• Description: MOSFET N-CH 40V 120A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP200NF04L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 90nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6400pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 m Ohms
• Forward Transconductance Gfs (max / Min): 60 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 120 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 80 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 270 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4819-5

STP200NF04L - STB200NF04L - STB200NF04L-1
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Figure 3: Safe Operating Area
Figure 4: Output Characteristics
Figure 5: Transconductance
Figure 6: Thermal Impedance
Figure 7: Transfer Characteristics
Figure 8: Static Drain-source On Resistance