IXTH75N10L2 IXYS, IXTH75N10L2 Datasheet

no-image

IXTH75N10L2

Manufacturer Part Number
IXTH75N10L2
Description
MOSFET N-CH 100V 75A TO-247
Manufacturer
IXYS
Series
Linear L2™r
Datasheet

Specifications of IXTH75N10L2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
21 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
215nC @ 10V
Input Capacitance (ciss) @ Vds
8100pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
TO-247
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
75
Rds(on), Max, Tj=25°c, (?)
0.021
Ciss, Typ, (pf)
8100
Qg, Typ, (nc)
215
Trr, Typ, (ns)
180
Pd, (w)
400
Rthjc, Max, (k/w)
0.31
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
LinearL2
MOSFET w/extended
FBSOA
N-Channel Enhancement Mode
Guaranteed FBSOA
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
T
T
Continuous
Transient
T
T
T
T
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
TO-247
TO-268
Test Conditions
V
V
V
V
V
Test Conditions
J
J
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 10V, I
= 0V, I
= V
= ±20V, V
= V
Power
GS
DSS
, I
, V
D
D
D
= 250μA
= 250μA
GS
= 0.5 • I
DS
= 0V
= 0V
D25
GS
, Note 1
= 1MΩ
T
Advance Technical Information
J
= 125°C
JM
IXTH75N10L2
IXTT75N10L2
-55 to +150
-55 to +150
Characteristic Values
Min.
100
1.13/10
2.5
Maximum Ratings
+150
G
±30
400
300
260
100
100
±20
225
6.0
4.0
2.5
75
75
O
Typ.
R
w w
Gi
±100
Nm/lb.in.
Max.
4.5
50
21 mΩ
D
O O
O
S
5
D D D D
μA
μA
°C
nA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
J
V
I
R
TO-247 (IXTH)
TO-268 (IXTT)
G = Gate
S = Source
Features
Advantages
Applications
D25
Designed for Linear Operation
International Standard Packages
Avalanche Rated
Integrated Gate Resistor for Easy
Guaranteed FBSOA at 75°C
Solid State Circuit Breakers
Soft Start Controls
Linear Amplifiers
Programmable Loads
Current Regulators
Paralleling
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
G
D
≤ ≤ ≤ ≤ ≤ 21mΩ Ω Ω Ω Ω
= 100V
= 75A
S
G
D
Tab = Drain
S
D (Tab)
D (Tab)
= Drain
DS100200(9/09)

Related parts for IXTH75N10L2

IXTH75N10L2 Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTH75N10L2 IXTT75N10L2 G O Maximum Ratings 100 = 1MΩ 100 GS ±20 ±30 75 225 JM 75 2.5 400 -55 to +150 +150 -55 to +150 300 260 1.13/10 6 ...

Page 2

... Characteristic Values Min. Typ. = 75° 240 p Characteristic Values Min. Typ. JM 180 16.2 1.46 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH75N10L2 IXTT75N10L2 TO-247 (IXTH) Outline Max Ω Terminals Gate 3 - Source nC Dim. Millimeter nC Min. Max ...

Page 3

... Fig. 2. Extended Output Characteristics @ 20V GS 14V 12V 10V Volts DS Fig Normalized to I DS(on) Junction Temperature V = 10V GS -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - Degrees Centigrade C IXTH75N10L2 IXTT75N10L2 = 25º 37.5A Value vs 75A 37. 100 125 150 75 100 125 150 ...

Page 4

... T = 25º 0.9 1.0 1.1 1.2 1.3 1.00 C iss 0.10 C oss C rss 0.01 0.0001 IXTH75N10L2 IXTT75N10L2 Fig. 8. Transconductance 100 120 140 I - Amperes D Fig. 10. Gate Charge V = 50V 37. 10mA 100 150 200 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 14. Forward-Bias Safe Operating Area 1,000 R DS(on) Limit 25µs 100 100µs 1ms 10ms 10 100ms 150º 75ºC C Single Pulse 1 100 1 IXTH75N10L2 IXTT75N10L2 @ T = 75ºC C 25µs 100µs 1ms 10ms 100ms DC 10 100 V - Volts DS IXYS REF: T_75N10L2(7R)9-25-09 ...

Related keywords