IXTH75N10L2 IXYS, IXTH75N10L2 Datasheet - Page 2

• Manufacturer Part Number: IXTH75N10L2
• Description: MOSFET N-CH 100V 75A TO-247
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTH75N10L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 21 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 215nC @ 10V
• Input Capacitance (ciss) @ Vds: 8100pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 75
• Rds(on), Max, Tj=25°c, (?): 0.021
• Ciss, Typ, (pf): 8100
• Qg, Typ, (nc): 215
• Trr, Typ, (ns): 180
• Pd, (w): 400
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Safe Operating Area Specification
Symbol
SOA
Source-Drain Diode
Symbol
I
I
V
t
I
Q
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
(T
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
Gi
thJC
thCS
g(on)
gs
gd
RM
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
V
V
Integrated Gate Input Resistor
Resistive Switching Times
V
R
V
TO-247
Test Conditions
V
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
I
V
Test Conditions
F
F
DS
GS
GS
GS
DS
GS
R
G
= I
= 37.5A, -di/dt = 100A/μs,
= 50V, V
= 10V, V
= 0Ω (External)
= 80V, I
= 0V
= 10V, I
= 0V, V
= 10V, V
S
, V
ADVANCE TECHNICAL INFORMATION
GS
= 0V, Note 1
GS
D
DS
D
DS
= 3A, T
DS
= 0V
= 0.5 • I
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
C
D25
= 75°C, T
DSS
, Note 1
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
p
= 5s
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Characteristic Values
35
Characteristic Values
Min.
Min.
240
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
8100
1280
0.21
16.2
1.46
Typ.
Typ.
350
215
180
Typ.
3.0
44
23
14
68
15
36
80
0.31 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
53
300
Max.
1.4
75
°C/W
μC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
W
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-268 (IXTT) Outline
TO-247 (IXTH) Outline
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
3 - Source
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
1
.4
3 - Source
IXTH75N10L2
IXTT75N10L2
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
2 - Drain
Tab - Drain
0.205 0.225
0.232 0.252
∅ P
2 - Drain
Tab - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216