IXTH75N10L2 IXYS, IXTH75N10L2 Datasheet - Page 4

• Manufacturer Part Number: IXTH75N10L2
• Description: MOSFET N-CH 100V 75A TO-247
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTH75N10L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 21 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 215nC @ 10V
• Input Capacitance (ciss) @ Vds: 8100pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 75
• Rds(on), Max, Tj=25°c, (?): 0.021
• Ciss, Typ, (pf): 8100
• Qg, Typ, (nc): 215
• Trr, Typ, (ns): 180
• Pd, (w): 400
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100.0
10.0
240
200
160
120
200
180
160
140
120
100
1.0
0.1
80
60
40
20
80
40
0
0
3.5
0.4
0
f
= 1 MHz
4.0
0.5
5
4.5
0.6
Fig. 9. Forward Voltage Drop of
10
5.0
T
Fig. 7. Input Admittance
J
0.7
= 125ºC
Fig. 11. Capacitance
15
Intrinsic Diode
5.5
V
V
V
GS
SD
DS
0.8
- Volts
- Volts
- Volts
6.0
20
0.9
T
6.5
J
25
= 25ºC
T
1.0
J
C iss
C oss
C rss
= - 40ºC
7.0
125ºC
25ºC
30
1.1
7.5
35
1.2
8.0
1.3
8.5
40
1.00
0.10
0.01
16
14
12
10
90
80
70
60
50
40
30
20
10
0.0001
8
6
4
2
0
0
0
0
V
I
I
D
G
DS
20
Fig. 12. Maximum Transient Thermal Impedance
= 37.5A
= 10mA
= 50V
50
40
0.001
60
Fig. 8. Transconductance
100
Fig. 10. Gate Charge
Q
Pulse Width - Seconds
80
G
- NanoCoulombs
0.01
I
D
- Amperes
100
150
120
0.1
200
IXTH75N10L2
T
IXTT75N10L2
140
J
= - 40ºC
125ºC
25ºC
160
250
1
180
200
300
220
10