IXTH75N10L2 IXYS, IXTH75N10L2 Datasheet - Page 3

• Manufacturer Part Number: IXTH75N10L2
• Description: MOSFET N-CH 100V 75A TO-247
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTH75N10L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 21 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 215nC @ 10V
• Input Capacitance (ciss) @ Vds: 8100pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 75
• Rds(on), Max, Tj=25°c, (?): 0.021
• Ciss, Typ, (pf): 8100
• Qg, Typ, (nc): 215
• Trr, Typ, (ns): 180
• Pd, (w): 400
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
0.0
0.0
0
V
GS
20
0.3
Fig. 5. R
= 10V
0.2
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
40
0.6
60
DS(on)
0.4
0.9
80
Normalized to I
T
T
J
J
0.6
= 125ºC
= 25ºC
100
V
1.2
Drain Current
GS
V
DS
V
I
= 20V
V
D
GS
DS
120
14V
12V
10V
- Volts
- Amperes
= 20V
0.8
1.5
- Volts
14V
12V
10V
140
1.8
D
160
1.0
= 37.5A Value vs.
180
2.1
4V
8V
6V
4V
8V
6V
J
1.2
J
= 125ºC
200
= 25ºC
2.4
220
1.4
2.7
240
1.6
260
3.0
280
240
200
160
120
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
80
40
80
70
60
50
40
30
20
10
0
0
-50
-50
0
V
Fig. 2. Extended Output Characteristics @ T
GS
V
GS
Fig. 4. R
= 10V
-25
-25
= 20V
14V
12V
5
Fig. 6. Maximum Drain Current vs.
DS(on)
0
0
Junction Temperature
10V
7V
5V
8V
6V
Normalized to I
T
Case Temperature
C
T
25
25
J
- Degrees Centigrade
10
V
- Degrees Centigrade
DS
- Volts
50
50
15
D
IXTH75N10L2
IXTT75N10L2
75
75
= 37.5A Value vs.
I
D
= 75A
100
100
20
I
D
J
= 37.5A
= 25ºC
125
125
150
150
25