TPC8A04-H(TE12L,Q) Toshiba, TPC8A04-H(TE12L,Q) Datasheet - Page 4

• Manufacturer Part Number: TPC8A04-H(TE12L,Q)
• Description: MOSFET N-CH SBD 18A SOP8 2-6J1B
• Manufacturer: Toshiba

Specifications of TPC8A04-H(TE12L,Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 2.3V @ 1mA
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Gate Charge (qg) @ Vgs: -
• Rds On (max) @ Id, Vgs: -

1000
10,8,6,5,4.5,4
100
0.1
30
20
10
10
0
5
4
3
2
1
1
0
0.1
0
0
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
Drain-source voltage V
Gate-source voltage V
0.2
1
Drain current I
2.5
1
100
Ta = −55°C
0.4
2
⎪Y
I
I
D
D
fs
– V
– V
⎪ − I
DS
GS
Ta = −55°C
100
0.6
D
25
3
D
10
GS
DS
(A)
25
Common source
Ta = 25°C
Pulse test
V GS = 2.1 V
0.8
2.45
4
(V)
(V)
2.4
2.3
100
1.0
5
4
0.20
0.15
0.10
0.05
10,8,6,5,4.5,4
10
10
8
6
4
2
0
0
1
0.1
0
0
Common source
Ta = 25°C
Pulse test
Drain-source voltage V
Gate-source voltage V
0.4
2
Drain current I
1
R
0.8
V
DS (ON)
4
I
2.55
DS
D
V GS = 10 V
– V
– V
4.5
DS
GS
− I
1.2
6
D
D
10
GS
I D = 18 A
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
4.5
9
V GS = 2.3 V
1.6
TPC8A04-H
8
(V)
(V)
2010-04-20
2.45
2.4
2.5
100
10
2