TPC8A04-H(TE12L,Q) Toshiba, TPC8A04-H(TE12L,Q) Datasheet - Page 7

• Manufacturer Part Number: TPC8A04-H(TE12L,Q)
• Description: MOSFET N-CH SBD 18A SOP8 2-6J1B
• Manufacturer: Toshiba

Specifications of TPC8A04-H(TE12L,Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 2.3V @ 1mA
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Gate Charge (qg) @ Vgs: -
• Rds On (max) @ Id, Vgs: -

100
160
140
120
100
10
80
60
40
20
1
0
0
0
V GS = 0 V
Pulse test
Drain-source voltage V
Drain-source voltage V
−0.2
10
−0.4
I
DR
Tch – V
– V
20
100
DSF
DS
−0.6
Ta = 25°C
DSF
DS
30
75
−0.8
V GS = 0 V
Pulse test
(V)
(V)
−1
40
7
100000
10000
1000
100
10
0
V GS = 0 V
Pulse test
Channel temperature Tch (°C)
40
I
DSS
– Tch (typ.)
V DS = 30 V
80
20
TPC8A04-H
120
2010-04-20
10
5
160