TPC8A04-H(TE12L,Q) Toshiba, TPC8A04-H(TE12L,Q) Datasheet - Page 6

• Manufacturer Part Number: TPC8A04-H(TE12L,Q)
• Description: MOSFET N-CH SBD 18A SOP8 2-6J1B
• Manufacturer: Toshiba

Specifications of TPC8A04-H(TE12L,Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 2.3V @ 1mA
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Gate Charge (qg) @ Vgs: -
• Rds On (max) @ Id, Vgs: -

1000
100
0.1
10
1
0.1
*Single-pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
I D max (Pulse) *
Drain-source voltage V
Safe operating area
1000
0.01
1
100
0.1
0.0001
10
10 ms *
1
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
0.001
V DSS max
10
t =1 ms *
DS
(V)
0.01
100
Pulse width t
0.1
6
r
th
– t
w
w
1
(s)
10
100
Single Pulse
(2)
(1)
1000
TPC8A04-H
2010-04-20