2SK1930(TE24L,Q) Toshiba, 2SK1930(TE24L,Q) Datasheet

2SK1930(TE24L,Q)

Manufacturer Part Number

2SK1930(TE24L,Q)

Description

MOSFET N-CH 1000V 4A TO-220

Manufacturer

Toshiba

Datasheet

1.2SK1930TE24LQ.pdf (6 pages)

Specifications of 2SK1930(TE24L,Q)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

3.8 Ohm @ 2A, 10V

Drain To Source Voltage (vdss)

1000V (1kV)

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

3.5V @ 1mA

Gate Charge (qg) @ Vgs

60nC @ 10V

Input Capacitance (ciss) @ Vds

700pF @ 25V

Power - Max

100W

Mounting Type

Surface Mount

Package / Case

2-10S2B

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Chopper Regulator, DC−DC Converter, and Motor Drive

Applications

Absolute Maximum Ratings

Thermal Characteristics

Low drain−source ON resistance

High forward transfer admittance

Low leakage current : I

Enhancement mode

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII

Pulse (Note 1)

= 20 kΩ)

: V

DSS

(Note 1)

= 1.5~3.5 V (V

= 300 μA (max) (V

(Ta = 25°C)

Symbol

th (ch–c)

th (ch–a)

: R

: |Y

DGR

GSS

DSS

stg

DS (ON)

2SK1930

| = 2.0 S (typ.)

= 10 V, I

= 3.0 Ω (typ.)

−55~150

= 800 V)

Rating

1000

Max

1.25

83.3

±20

100

150

= 1 mA)

°C / W

Unit

°C

Weight: 1.5 g (typ.)

JEDEC

JEITA

TOSHIBA

JEDEC

JEITA

TOSHIBA

2-10S1B

2-10S2B

)

2006-11-09

―

2SK1930

Unit: mm

Related parts for 2SK1930(TE24L,Q)

2SK1930(TE24L,Q) Summary of contents

Page 1

... TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII Chopper Regulator, DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance High forward transfer admittance Low leakage current : I = 300 μA (max) (V DSS Enhancement mode : V = 1.5~3 Absolute Maximum Ratings Characteristics Drain−source voltage Drain− ...

Page 2

Electrical Characteristics Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate ...

Page 3

3 2SK1930 2006-11-09 ...

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4 2SK1930 2006-11-09 ...

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5 2SK1930 2006-11-09 ...

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... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...

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