2SK1930(TE24L,Q) Toshiba, 2SK1930(TE24L,Q) Datasheet - Page 2

• Manufacturer Part Number: 2SK1930(TE24L,Q)
• Description: MOSFET N-CH 1000V 4A TO-220
• Manufacturer: Toshiba

Specifications of 2SK1930(TE24L,Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.8 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 3.5V @ 1mA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: 2-10S2B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Source−Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cut−off current
Drain−source breakdown
voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Characteristics
Characteristics
K1930
Rise time
Turn−on time
Fall time
Turn−off time
(Note 1)
(Note 1)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
V
(Ta = 25°C)
R
Symbol
Symbol
(BR) DSS
DS (ON)
V
I
I
I
C
|Y
C
C
Q
Q
GSS
DRP
DSS
I
V
t
t
Q
DSF
DR
off
oss
t
on
rss
t
iss
gs
gd
th
fs
r
f
g
|
V
V
I
V
V
V
V
V
I
D
DR
GS
DS
DS
GS
DS
DS
DD
= 10 mA, V
= 4 A, V
= 800 V, V
= 10 V, I
= 20 V, I
= 25 V, V
≈ 400 V, V
= ±20 V, V
= 10 V, I
GS
2
D
D
D
GS
(Ta = 25°C)
GS
Test Condition
Test Condition
= 1 mA
= 2 A
DS
GS
= 2 A
GS
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 0 V
= 0 V
—
—
D
= 4 A
1000
Min
Min
1.5
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
Typ.
700
100
3.0
2.0
—
—
—
—
55
18
30
12
70
60
35
25
—
—
—
2006-11-09
±100
2SK1930
−1.9
Max
Max
300
3.5
3.8
12
—
—
—
—
—
—
—
—
—
—
—
—
4
Unit
Unit
μA
nC
nA
pF
ns
V
V
Ω
S
A
A
V