NTGS4111PT1G ON Semiconductor, NTGS4111PT1G Datasheet - Page 2

• Manufacturer Part Number: NTGS4111PT1G
• Description: MOSFET P-CH 30V 2.6A 6-TSOP
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTGS4111PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 15V
• Power - Max: 630mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.06 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.7 A
• Power Dissipation: 1250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.06Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: TSOP
• Dc: 04+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTGS4111PT1GOSTR

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS, VGS = −10 V (Note 4)
SWITCHING CHARACTERISTICS, VGS = −4.5 V (Note 4)
DRAIN − SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Characteristic
Characteristic
(T
J
= 25°C unless otherwise noted)
V
V
V
(BR)DSS
Symbol
Q
Symbol
V
GS(TH)
R
Q
t
t
(BR)DSS
t
t
C
C
d(OFF)
d(OFF)
GS(TH)
C
I
I
G(TOT)
Q
Q
d(ON)
d(ON)
Q
DS(on)
V
g
GSS
G(TH)
t
DSS
OSS
RSS
RR
t
t
ISS
t
t
FS
GS
GD
t
t
DS
RR
a
b
r
f
r
f
/T
/T
http://onsemi.com
J
J
dI
V
V
V
V
V
V
S
V
I
V
V
GS
V
GS
GS
V
DS
V
S
V
I
I
/dt = 100 A/ms, I
GS
GS
GS
D
D
GS
GS
DS
GS
GS
DS
= −1.0 A
2
= −4.5 V, V
= −1.0 A, R
= −1.0 A, R
= −10 V, V
= −10 V, V
= −24 V
= 0 V,
= 0 V,
= −4.5 V, I
Test Condition
= V
Test Condition
= −10 V, I
= −10 V, I
= 0 V, I
= 0 V, f = 1.0 MHz,
= 0 V, V
V
I
V
D
DS
DS
GS
= −3.7 A
, I
= −15 V
D
= 0 V
D
GS
DD
DD
= −250 mA
DD
= −250 mA
D
D
G
G
D
T
T
= −3.7 A
T
= −3.7 A
T
= ±20 V
= −2.7 A
= 6.0 W
= 6.0 W
S
J
J
= −15 V,
= −15 V,
= −15 V,
J
J
= 125°C
= 125°C
= −1.0 A
= 25°C
= 25°C
−1.0
Min
Min
−30
15.25
−0.76
−0.60
Typ
−17
750
140
105
Typ
5.0
6.0
0.8
2.6
3.4
9.0
9.0
9.0
8.0
8.0
38
68
38
22
11
15
28
22
17
−100
±100
Max
−1.0
−3.0
Max
−1.2
110
60
32
17
18
85
45
20
28
56
50
40
mV/°C
mV/°C
Unit
Unit
mW
mA
nA
pF
nC
nC
ns
ns
ns
V
V
S
V