NTGS4111PT1G ON Semiconductor, NTGS4111PT1G Datasheet - Page 4

• Manufacturer Part Number: NTGS4111PT1G
• Description: MOSFET P-CH 30V 2.6A 6-TSOP
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTGS4111PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 15V
• Power - Max: 630mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.06 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.7 A
• Power Dissipation: 1250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.06Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: TSOP
• Dc: 04+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTGS4111PT1GOSTR

−GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.01
0.0001
1400
1300
1200
1000
1100
100
0.1
0.001
900
800
700
600
500
400
300
200
100
10
0.01
1
0.1
0.1
0
1E−07
10
1
V
SINGLE PULSE
T
Figure 9. Maximum Rated Forward Biased
C
C
GS
C
V
−V
D = 0.5
iss
rss
0.05
0.02
0.01
0.1
= 25°C
0.2
DS
Single Pulse
= −20 V
DS
5
= 0 V
−V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1E−06
GS
Figure 7. Capacitance Variation
R
THERMAL LIMIT
PACKAGE LIMIT
0
DS(on)
Safe Operating Area
V
−V
GS
1
DS
TYPICAL PERFORMANCE CURVES
= 0 V
LIMIT
5
1E−05
C
oss
10
C
rss
15
1E−04
10
Figure 11. FET Thermal Response
20
T
100 ms
J
1 ms
10 ms
dc
1E−03
= 25°C
25
http://onsemi.com
C
iss
100
30
t, TIME (s)
4
1E−02
12
10
8
6
4
2
0
0
0.1
10
(T
1
Q
1
0.3
J
Figure 8. Gate−to−Source Voltage vs. Total
GS
= 25°C unless otherwise noted)
2
V
Figure 10. Diode Forward Voltage vs. Current
V
DS
1E−01
GS
−V
3
0.4
SD
= 0 V
Q
4
Q
g
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
, TOTAL GATE CHARGE (nC)
GD
5
0.5
T
J
6
= 150°C
1E+00
Gate Charge
7
0.6
QT
8
9
0.7
1E+01
10
11
V
0.8
GS
12
T
J
I
T
13
D
= −55°C
J
0.9
1E+02
T
= −3.7 A
= 25°C
J
14
T
= 25°C
J
= 100°C
15
1.0
16
1E+03
20
10
0
1.1