NTGS4111PT1G ON Semiconductor, NTGS4111PT1G Datasheet - Page 3

• Manufacturer Part Number: NTGS4111PT1G
• Description: MOSFET P-CH 30V 2.6A 6-TSOP
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTGS4111PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 15V
• Power - Max: 630mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.06 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.7 A
• Power Dissipation: 1250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.06Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: TSOP
• Dc: 04+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTGS4111PT1GOSTR

12
10
11
0.2
0.1
9
8
7
6
5
4
3
2
1
0
1.5
1.0
0.5
0
0
−10V
−50
2
Figure 3. On−Resistance vs. Gate−to−Source
0.4
I
V
−V
D
GS
Figure 1. On−Region Characteristics
= −3.7 A
−25
DS
3
Figure 5. On−Resistance Variation with
= −10 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.8
−V
T
J
GS,
4
, JUNCTION TEMPERATURE (°C)
0
1.2
−4.5 V
−5 V
GATE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES
1.6
5
25
−5.5 V
Temperature
T
−6 V
−4.2 V
Voltage
J
= 25°C
2
6
50
−8 V
2.4
7
75
2.8
100
8
3.2
T
I
D
J
= −3.7 A
= 25°C
http://onsemi.com
−3.8 V
−3.6 V
−3.4 V
−3.2 V
3.6
−3 V
125
9
−4 V
150
4
10
3
100000
10000
1000
0.05
100
0.1
(T
12
10
11
0
9
8
7
6
5
4
3
2
1
0
2.0
J
5
Figure 4. On−Resistance vs. Drain Current and
1
= 25°C unless otherwise noted)
V
V
T
Figure 6. Drain−to−Source Leakage Current
GS
DS
J
−V
= 25°C
−V
1.5
= 0 V
DS
≥ −10 V
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
10
, GATE−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
2
25°C
DRAIN CURRENT (AMPS)
V
V
GS
GS
Gate Voltage
2.5
15
= −4.5 V
3.0
vs. Voltage
= −10 V
T
T
100°C
J
J
= 150°C
= 100°C
3
T
J
= −55°C
20
3.5
4
25
4.0
4.5
30
5