BSP89 L6327 Infineon Technologies, BSP89 L6327 Datasheet - Page 4

• Manufacturer Part Number: BSP89 L6327
• Description: MOSFET N-CH 240V 350MA SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP89 L6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 350mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 350mA
• Vgs(th) (max) @ Id: 1.8V @ 108µA
• Gate Charge (qg) @ Vgs: 6.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 240 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.35 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSP89 L6327; BSP89L6327INTR; BSP89L6327XT; SP000089216

1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
10
10
10
= f (T
10
10
W
1.9
1.6
1.4
1.2
0.8
0.6
0.4
0.2
A
-1
-2
-3
1
0
1
0
10
0
BSP89
BSP89
0
DS
A
20
)
)
40
10
60
1
A
= 25 °C
80
100
10
DC
2
120
t p = 160.0µs
1 ms
10 ms
°C
V
T
V
Rev. 2.1
A
DS
160
10
Page 4
3
2 Drain current
I
parameter: V
4 Transient thermal impedance
Z
parameter : D = t
D
thJA
= f (T
K/W
10
10
0.38
0.32
0.28
0.24
0.16
0.12
0.08
0.04
10
10
10
0.2
A
= f (t
-1
-2
0
2
1
0
10
0
BSP89
BSP89
A
-5
)
10
p
20
)
single pulse
-4
GS
10
40
³ 10 V
-3
p
10
/T
60
-2
10
80
-1
10
100
0
10
2009-08-18
120
1
10
D = 0.50
2
BSP89
°C
0.20
0.10
0.05
0.02
0.01
T
t
p
A
s
160
10
4