BSP89 L6327 Infineon Technologies, BSP89 L6327 Datasheet - Page 5

• Manufacturer Part Number: BSP89 L6327
• Description: MOSFET N-CH 240V 350MA SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP89 L6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 350mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 350mA
• Vgs(th) (max) @ Id: 1.8V @ 108µA
• Gate Charge (qg) @ Vgs: 6.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 240 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.35 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSP89 L6327; BSP89L6327INTR; BSP89L6327XT; SP000089216

5 Typ. output characteristic
I
parameter: T
7 Typ. transfer characteristics
I
parameter: T
D
D
= f ( V
= f (V
0.6
0.4
0.3
0.2
0.1
0.6
0.4
0.3
0.2
0.1
A
A
0
0
0
0
DS
GS
0.5
)
0.5
); V
j
j
1
= 25 °C, V
= 25 °C
DS
1.5
1
³ 2 x I
2
1.5
2.5
D
GS
x R
2
3
DS(on)max
3.5
2.5
4
3V
3.4V
3.6V
4.2V
4.6V
5V
6V
10V
V
V
V
V
Rev. 2.1
DS
GS
3.5
5
Page 5
6 Typ. drain-source on resistance
R
parameter: T
8 Typ. forward transconductance
g
parameter: T
fs
DS(on)
= f(I
W
0.6
S
0.4
0.3
0.2
0.1
9
7
6
5
4
3
2
1
0
0
0
0
D
= f (I
)
0.1
0.1
D
j
j
= 25 °C, V
= 25 °C
)
0.2
0.2
0.3
0.3
GS
0.4
0.4
2009-08-18
A
A
BSP89
3V
3.4V
3.6V
4.2V
4.6V
5V
6V
10V
I
I
D
D
0.6
0.6