BSP89 L6327 Infineon Technologies, BSP89 L6327 Datasheet - Page 8

• Manufacturer Part Number: BSP89 L6327
• Description: MOSFET N-CH 240V 350MA SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP89 L6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 350mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 350mA
• Vgs(th) (max) @ Id: 1.8V @ 108µA
• Gate Charge (qg) @ Vgs: 6.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 240 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.35 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSP89 L6327; BSP89L6327INTR; BSP89L6327XT; SP000089216

Rev. 2.1
BSP89
2009-08-18
Page 8