AOD4185 Alpha & Omega Semiconductor Inc, AOD4185 Datasheet - Page 2

• Manufacturer Part Number: AOD4185
• Description: MOSFET P-CH 40V 50A DPAK
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AOD4185

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 55nC @ 10V
• Input Capacitance (ciss) @ Vds: 2550pF @ 20V
• Power - Max: 62.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1222-2

AOD4185/AOI4185
Alpha & Omega Semiconductor, Ltd.
Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
V
I
R
g
V
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
Q
t
t
t
t
t
Q
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
A: The value of R
are based on T
B. The power dissipation P
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T
G. These tests are performed with the device mounted on 1 in
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1
DSS
GSS
D(ON)
S
D(on)
r
D(off)
f
rr
Rev3: Oct 2010
FS
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
g
gs
gd
rr
DSS
(-10V)
(-4.5V)
θJA
is the sum of the thermal impedence from junction to case R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
J(MAX)
θJA
=150°C, using steady state junction-to-ambient thermal resistance.
is measured with the device in a still air environment with T
D
is based on T
Parameter
J
=25°C unless otherwise noted)
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
ST
2
Conditions
I
V
V
V
V
V
V
V
I
V
V
V
I
V
R
I
FR-4 board with 2oz. Copper, in a still air environment with T
D
S
D
F
F
2008).
DS
DS
DS
GS
GS
GS
DS
GS
GS
GS
GS
=-20A, dI/dt=100A/µs
=-20A, dI/dt=100A/µs
=-1A,V
GEN
=-250µA, V
=-20A
J(MAX)
=-40V, V
=0V, V
=V
=-5V, I
=-10V, V
=-10V, I
=-4.5V, I
=0V, V
=0V, V
=-10V, V
=-10V, V
=3Ω
=175°C.
GS
θJC
GS
I
D
GS
D
and case to ambient.
DS
DS
=0V
=-250µA
=-20A
D
D
GS
DS
DS
DS
= ±20V
=-20V, f=1MHz
=0V, f=1MHz
=-20A
GS
=-15A
A
=0V
=-5V
=-20V,
=-20V, R
=0V
=25°C. The power dissipation P
T
L
T
J
=1Ω,
=125°C
J
=55°C
TBD
TBD
-115
Min
-1.7
-40
2.5
DSM
-0.72
2550
12.5
18.6
Typ
-1.9
280
190
8.6
9.4
19
16
50
42
20
55
30
38
47
4
7
and current rating I
A
=25°C.
±100
Max
-20
www.aosmd.com
15
23
20
55
49
-1
-5
-3
-1
6
Units
mΩ
DSM
nC
nC
nC
nC
µA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
A
S
V
A