AOD4185 Alpha & Omega Semiconductor Inc, AOD4185 Datasheet - Page 4

• Manufacturer Part Number: AOD4185
• Description: MOSFET P-CH 40V 50A DPAK
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AOD4185

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 55nC @ 10V
• Input Capacitance (ciss) @ Vds: 2550pF @ 20V
• Power - Max: 62.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1222-2

AOD4185/AOI4185
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
0.1
10
10
8
6
4
2
0
1
0.1
0.01
0
0.1
10
0.00001
1
R
limited
V
I
D
DS(ON)
DS
=-20A
T
T
5
J(Max)
C
=-20V
Figure 7: Gate-Charge Characteristics
=25°C
D=T
T
R
J,PK
Figure 9: Maximum Forward Biased
θJC
=175°C
10
on
=2.4°C/W
=T
Safe Operating Area (Note F)
/T
c
+P
15
DM
1
.Z
-V
θJC
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Q
20
DS
g
.R
0.0001
(nC)
(Volts)
Single Pulse
θJC
25
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
30
10
DC
35
40
100µs
0.001
10µs
1ms
10ms
Pulse Width (s)
45
100
10000
3500
3000
2500
2000
1500
1000
1000
500
100
10
0.00001
150
0
0
0.01
Figure 10: Single Pulse Power Rating Junction-to-
Figure 8: Capacitance Characteristics
5
0.0001
C
rss
10
P
D
C
T
15
oss
0.001
-V
on
DS
Pulse Width (s)
C
Case (Note F)
T
(Volts)
iss
0.1
20
0.01
25
T
T
J(Max)
C
30
=25°C
www.aosmd.com
0.1
mJ
=175°C
35
1
40
1