AOD4185 Alpha & Omega Semiconductor Inc, AOD4185 Datasheet - Page 3

• Manufacturer Part Number: AOD4185
• Description: MOSFET P-CH 40V 50A DPAK
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AOD4185

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 55nC @ 10V
• Input Capacitance (ciss) @ Vds: 2550pF @ 20V
• Power - Max: 62.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1222-2

AOD4185/AOI4185
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
24
22
20
18
16
14
12
10
45
40
35
30
25
20
15
10
0
0
3
Figure 3: On-Resistance vs. Drain Current and
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 1: On-Region Characteristics
4
10
1
-10V
5
20
-V
2
V
Gate Voltage
DS
V
GS
6
GS
`
-V
(Volts)
=-4.5V
-I
=-10V
30
GS
D
(A)
(Volts)
-6.0V
7
3
125°C
25°C
40
8
V
GS
4
I
50
D
=-3.5V
-4.0V
-4.5V
=-20A
9
60
5
10
0.00001
0.0001
0.001
0.01
100
100
1.8
1.6
1.4
1.2
0.8
0.6
80
60
40
20
0.1
10
150
0
2
1
1
1.5
Figure 4: On-Resistance vs. Junction Temperature
-50 -25
0.0
V
DS
Figure 6: Body-Diode Characteristics
Figure 2: Transfer Characteristics
2
=-5V
125°C
0.2
0
2.5
125°C
25
Temperature (°C)
0.4
-V
-V
50
GS
3
V
I
SD
D
GS
(Volts)
=-20A
(Volts)
=-10V
75 100 125 150 175 200
0.6
25°C
3.5
25°C
0.8
4
V
I
D
GS
=-15A
www.aosmd.com
=-4.5V
4.5
1.0
mJ
5
1.2