2SJ356-T1-AY Renesas Electronics America, 2SJ356-T1-AY Datasheet

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2SJ356-T1-AY

Manufacturer Part Number
2SJ356-T1-AY
Description
MOSFET P-CH 60V SC-62
Manufacturer
Renesas Electronics America
Datasheet

Specifications of 2SJ356-T1-AY

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
500 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
11.6nC @ 10V
Input Capacitance (ciss) @ Vds
270pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
To our customers,
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Renesas Electronics website: http://www.renesas.com
Old Company Name in Catalogs and Other Documents
April 1
Renesas Electronics Corporation
st
, 2010

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2SJ356-T1-AY Summary of contents

Page 1

To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...

Page 2

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

Page 3

... The 2SJ356 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output operating This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters. FEATURES • Can be directly driven by 5-V IC • ...

Page 4

... –2 – 2 di/ ˚C) A FORWARD BIAS SAFE OPERATING AREA –10 –5 –2 –1 –0.5 –0.2 –0.1 Single pulse –0.05 125 150 –0.5 –1 V 2SJ356 MIN. TYP. MAX. UNIT – –1.0 –1.4 –2.0 V 1.0 S 0.65 0.95 0.41 0.50 270 pF 145 4 115 ns ...

Page 5

... A 0 –1 –0.001 –0.01 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1 0 0.4 0.2 –10 0 –2 –4 –6 –8 –10 –12 –14 –16 – Gate to Source Voltage - V GS 2SJ356 T = –25 ˚ ˚ ˚ ˚C A –2 –3 – 150 ˚ ˚C ...

Page 6

... DRAIN TO SOURCE VOLTAGE 10 000 1 000 100 MHz 10 –1.0 –1.2 – REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1 000 di/ 100 10 –10 –0.05 –0.1 I 100 Pulse Width - s 2SJ356 C iss C oss C rss –10 –100 - Drain to Source Voltage - V –0.5 –1 –5 –10 - Diode Forward Current - 100 ...

Page 7

... REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide 2SJ356 Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 ...

Page 8

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2SJ356 M4 94.11 ...

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