2SJ356-T1-AY Renesas Electronics America, 2SJ356-T1-AY Datasheet - Page 3

• Manufacturer Part Number: 2SJ356-T1-AY
• Description: MOSFET P-CH 60V SC-62
• Manufacturer: Renesas Electronics America

Specifications of 2SJ356-T1-AY

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 500 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 11.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document No. D11218EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
a switching element that can be directly driven by the output of an
IC operating at 5 V.
characteristics and is ideal for driving the actuators and DC/DC
converters.
FEATURES
• Can be directly driven by 5-V IC
• Low ON resistance
ABSOLUTE MAXIMUM RATINGS (T
The internal diode connected between the gate and source of this product is to protect the product from static
electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect
a protection circuit.
Take adequate preventive measures against static electricity when handling this product.
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
The 2SJ356 is a P-channel MOS FET of a vertical type and is
This product has a low ON resistance and superb switching
R
R
DS(on)
DS(on)
= 0.95
= 0.50
PARAMETER
MAX. @V
MAX. @V
The information in this document is subject to change without notice.
GS
GS
FOR HIGH-SPEED SWITCHING
= –4 V, I
= –10 V, I
SYMBOL
V
V
I
I
P
T
T
D(DC)
D(pulse)
P-CHANNEL MOS FET
DSS
GSS
T
ch
stg
D
DATA SHEET
D
A
= –1.0 A
= –1.0 A
= 25 ˚C)
MOS FIELD EFFECT TRANSISTOR
V
V
PW
Duty cycle
16 cm
GS
DS
= 0
= 0
10 ms
2
0.7 mm, ceramic substrate used
TEST CONDITIONS
1 %
Gate
protection
diode
PACKAGE DIMENSIONS (in mm)
Gate (G)
0.42
±0.06
EQUIVALENT CIRCUIT
S
1.5
Source (S)
4.5 ±0.1
1.6 ±0.2
Drain (D)
3.0
D
0.47
±0.06
G
–55 to +150
Internal
diode
0.42
±0.06
RATING
–20/+10
2SJ356
–60
150
2.0
2.0
4.0
PIN CONNECTIONS
S:
D:
G:
Marking: PR
0.41
Source
Drain
Gate
1.5 ±0.1
+0.03
–0.05
UNIT
˚C
˚C
W
V
V
A
A
1996