2SJ356-T1-AY Renesas Electronics America, 2SJ356-T1-AY Datasheet - Page 5

• Manufacturer Part Number: 2SJ356-T1-AY
• Description: MOSFET P-CH 60V SC-62
• Manufacturer: Renesas Electronics America

Specifications of 2SJ356-T1-AY

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 500 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 11.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
0.01
0.1
0.8
0.6
0.4
0.2
–0.0001
–5
–4
–3
–2
–1
10
–0.001
1
1
0
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
V
Pulsed
V
Pulsed
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DS
GS
= –10 V
= –10 V
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
–1
–0.001
T
DS
–0.01
T
A
A
- Drain to Source Voltage - V
= 0 ˚C
= 0 ˚C
I
I
D
D
T
T
T
T
- Drain Current - A
- Drain Current - A
A
A
A
A
–2
T
= 150 ˚C
= 75 ˚C
= 25 ˚C
= –25 ˚C
A
= 150˚C
–0.01
–0.1
T
A
= 75 ˚C
–3
–4.0 V
T
A
T
–0.1
A
= 25 ˚C
V
–1
= –25 ˚C
GS
–4
= –2.0 V
Pulsed
–3.5 V
–3.0 V
–2.5 V
–10
–1
–5
–0.00001
–0.0001
–0.001
–0.01
–0.1
–10
1.5
0.5
0.8
0.6
0.4
0.2
–1
–0.001
1
0
1
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
Pulsed
I
GS
D
T
V
Pulsed
–2 –4 –6 –8 –10 –12 –14 –16 –18
= 1.0 A
A
DS
–1
= –4 V
T
= 150 ˚C
A
TRANSFER CHARACTERISTICS
= –10 V
V
V
= 25 ˚C
GS
–0.01
GS
- Gate to Source Voltage - V
- Gate to Source Voltage - V
I
T
D
T
A
- Drain Current - A
I
T
T
A
–2
D
= 0 ˚C
T
A
A
= 75 ˚C
= 2.0 A
T
A
= 150 ˚C
= 75 ˚C
A
= 25 ˚C
T
–0.1
= 0 ˚C
A
T
= –25 ˚C
A
= –25 ˚C
–3
–1
2SJ356
Pulsed
–4
–10
–20
3