2SK3919-ZK-E1-AY Renesas Electronics America, 2SK3919-ZK-E1-AY Datasheet - Page 6

• Manufacturer Part Number: 2SK3919-ZK-E1-AY
• Description: MOSFET N-CH 25V MP-3ZK/TO-252
• Manufacturer: Renesas Electronics America

Specifications of 2SK3919-ZK-E1-AY

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.6 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 2050pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
300
250
200
150
100
15
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
5
0
0
4
3
2
1
0
-100
1
0
Pulsed
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-50
T
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
DS
ch
0.5
V
V
GS
- Drain to Source Voltage - V
- Channel Temperature - °C
GS
I
= 10 V
D
= 5.0 V
10
- Drain Current - A
0
10 V
5.0 V
1
50
1.5
100
100
V
I
D
DS
2
150
= 1 mA
Pulsed
= 10 V
1000
Data Sheet D17078EJ4V0DS
200
2.5
1000
100
0.01
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
15
10
100
10
0.1
10
1
5
0
1
0.1
0
FORWARD TRANSFER CHARACTERISTICS
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
T
T
ch
ch
V
= −55°C
= −55°C
V
GS
1
125°C
150°C
125°C
150°C
GS
25°C
75°C
25°C
75°C
- Gate to Source Voltage - V
5
- Gate to Source Voltage - V
I
D
1
- Drain Current - A
2
I
10
D
3
= 32 A
10
4
V
Pulsed
15
DS
V
Pulsed
DS
= 10 V
Pulsed
5
2SK3919
= 10 V
100
20
6