2SK3919-ZK-E1-AY Renesas Electronics America, 2SK3919-ZK-E1-AY Datasheet - Page 8

• Manufacturer Part Number: 2SK3919-ZK-E1-AY
• Description: MOSFET N-CH 25V MP-3ZK/TO-252
• Manufacturer: Renesas Electronics America

Specifications of 2SK3919-ZK-E1-AY

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.6 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 2050pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
100
10
1
0.01
V
R
V
Starting T
I
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
DD
GS
AS
G
= 25 Ω
= 12.5 V
= 20 → 0 V
= 27 A
L - Inductive Load - mH
ch
0.1
= 25°C
E
1
AS
= 73 mJ
Data Sheet D17078EJ4V0DS
10
120
100
80
60
40
20
0
Starting T
25
SINGLE AVALANCHE ENERGY
DERATING FACTOR
50
ch
- Starting Channel Temperature - °C
75
100
V
R
V
I
AS
DD
GS
G
≤ 27 A
= 25 Ω
= 12.5 V
= 20 → 0 V
125
2SK3919
150