2SK3919-ZK-E1-AY Renesas Electronics America, 2SK3919-ZK-E1-AY Datasheet - Page 7

• Manufacturer Part Number: 2SK3919-ZK-E1-AY
• Description: MOSFET N-CH 25V MP-3ZK/TO-252
• Manufacturer: Renesas Electronics America

Specifications of 2SK3919-ZK-E1-AY

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.6 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 2050pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
1000
0.01
100
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
0.1
10
10
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1
1
8
6
4
2
0
-100
0.1
0
t
t
V
d(on)
r
V
GS
SWITCHING CHARACTERISTICS
F(S-D)
-50
T
= 10 V
ch
- Channel Temperature - °C
- Source to Drain Voltage - V
t
I
f
D
0.5
V
- Drain Current - A
GS
1
0
= 10 V
50
0 V
t
d(off)
1
100
10
V
V
R
DD
GS
G
= 10 Ω
I
Pulsed
= 12.5 V
= 10 V
D
150
Pulsed
= 32 A
1.5
Data Sheet D17078EJ4V0DS
200
100
10000
1000
1000
100
100
10
30
25
20
15
10
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
5
0
0.01
1
0
V
f = 1 MHz
GS
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
V
I
= 0 V
F
DS
- Diode Forward Current - A
0.1
Q
- Drain to Source Voltage - V
V
I
DD
G
D
- Gate Charge - nC
= 64 A, 42 A (at V
= 20 V
12.5 V
20
V
5 V
DS
10
1
di/dt = 100 A/µs
V
V
GS
GS
= 0 V
DD
C
10
40
rss
= 5 V)
2SK3919
C
C
oss
iss
100
100
12
10
8
6
4
2
0
5