NDD02N60ZT4G ON Semiconductor, NDD02N60ZT4G Datasheet - Page 3
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NDD02N60ZT4G
Manufacturer Part Number
NDD02N60ZT4G
Description
MOSFET N-CH 600V DPAK
Manufacturer
ON Semiconductor
Datasheet
1.NDF02N60ZG.pdf
(10 pages)
Specifications of NDD02N60ZT4G
Package / Case
DPak, DPak-3, SOT-223, TO-220, TO-220AB, TO-225AA, TO-92
Mounting Type
Surface Mount
Power - Max
57W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
10.1nC @ 10V
Vgs(th) (max) @ Id
4.5V @ 50µA
Current - Continuous Drain (id) @ 25° C
2.2A
Drain To Source Voltage (vdss)
600V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.8 Ohm @ 1A, 10V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4 Ohms
Forward Transconductance Gfs (max / Min)
1.7 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
1.4 A
Power Dissipation
57 W
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Gate Charge Qg
10.1 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDD02N60ZT4G
Manufacturer:
ON
Quantity:
2 500
Company:
Part Number:
NDD02N60ZT4G
Manufacturer:
ON Semiconductor
Quantity:
1 900
Company:
Part Number:
NDD02N60ZT4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
NDD02N60ZT4G
Manufacturer:
ON/安森美
Quantity:
20 000
6.00
5.75
5.50
5.25
5.00
4.75
4.50
4.25
4.00
3.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
−50
5.0
0.0
Figure 3. On−Region versus Gate−to−Source
V
GS
I
5.5
D
Figure 5. On−Resistance Variation with
−25
Figure 1. On−Region Characteristics
= 1 A
= 10 V
V
V
DS
GS
T
6.0
5.0
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
6.5
V
25
Temperature
7.0
10.0
GS
Voltage
= 10 V
7.5
50
7.0 V
8.0
15.0
75
8.5
TYPICAL CHARACTERISTICS
100
5.0 V
9.0
5.5 V
20.0
T
6.0 V
I
6.5 V
J
D
= 25°C
= 1 A
http://onsemi.com
125
9.5 10.0
25.0
150
3
5.25
5.00
4.75
4.50
4.25
4.00
3.75
1.15
1.10
1.05
1.00
0.95
0.90
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
−50
3
V
Figure 6. BV
T
I
V
0.3
D
GS
T
J
DS
Figure 4. On−Resistance versus Drain
−25
= 1 mA
J
= 25°C
= 10 V
= 150°C
4
V
= 25 V
Figure 2. Transfer Characteristics
GS
0.5
T
J
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
Current and Gate Voltage
0
0.8
I
5
D
, DRAIN CURRENT (A)
DSS
25
1.0
Variation with Temperature
T
6
J
= −55°C
1.3
50
T
J
7
1.5
= 25°C
75
1.8
8
100
2.0
125
9
2.3
150
2.5
10